Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going resear...

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Збережено в:

Бібліографічні деталі
Формат:	Online
Мова:	Англійська
Опубліковано:	MDPI - Multidisciplinary Digital Publishing Institute 2022
Предмети:	energy storage system power conditioning system silicon carbide vanadium redox flow batteries AlGaN/GaN SiC high electron mobility transistor Schottky barrier diode breakdown field noise charge traps radio frequency wide-bandgap (WBG) gallium nitride (GaN) silicon carbide (SiC) high electron mobility transistor (HEMT) metal-oxide-semiconductor field effect transistor (MOSFET) driving technology nickel oxide annealing temperature crystallite size optical band gap electrochromic device indium oxide thin film solution method plasma surface treatment bias stability aluminum nitride Schottky barrier diodes radio frequency sputtering X-ray diffraction X-ray photoelectron spectroscopy piezoelectric micromachined ultrasonic transducers ranging time of flight (TOF) time to digital converter circuit (TDC) AlGaN/GaN heterojunction p-GaN gate unidirectional operation rectifying electrode first-principles density functional theory pure β-Ga2O3 Sr-doped β-Ga2O3 p-type doping band structure density of states optical absorption AlN buffer layer NH3 growth interruption strain relaxation GaN-based LED low defect density gate bias modulation palladium catalyst gallium nitride nitrogen dioxide gas sensor laser micromachining sapphire AlGaN/GaN heterostructures high-electron mobility devices p-GaN gate HEMT normally off low-resistance SiC substrate temperature high electron-mobility transistor (HEMT) equivalent-circuit modeling microwave frequency scattering-parameter measurements GaN MIS-HEMTs fabrication threshold voltage stability supercritical technology GaN power HEMTs breakdown voltage current collapse compensation ratio auto-compensation carbon doping HVPE AlN high-temperature buffer layer nitridation high-electron mobility transistor heterogeneous integration SOI QST crystal growth cubic and hexagonal structure blue and yellow luminescence electron lifetime wafer dicing stealth dicing laser thermal separation dry processing laser processing wide bandgap semiconductor photovoltaic module digital signal processor synchronous buck converter polar semi-polar non-polar magnetron sputtering HTA GaN-HEMT mesa structures 2DEG X-ray sensor X-ray imaging n/a thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology thema EDItEUR::K Economics, Finance, Business and Management::KN Industry and industrial studies::KNB Energy industries and utilities
Онлайн доступ:	ONIX_20220621_9783036539942_18
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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

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