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Nanoelectronic Materials, Devices and Modeling

As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Li, Qiliang, Zhu, Hao
Format: Online
Sprache:Englisch
Veröffentlicht: MDPI - Multidisciplinary Digital Publishing Institute 2021
Schlagworte:
TA1-2040
T1-995
quantum mechanical
n/a
neuromorphic computation
off-current (Ioff)
double-gate tunnel field-effect-transistor
topological insulator
back current blocking layer (BCBL)
CMOS power amplifier IC
information integration
distributed Bragg
spike-timing-dependent plasticity
electron affinity
enhancement-mode
current collapse
gallium nitride (GaN)
band-to-band tunneling
vertical field-effect transistor (VFET)
ionic liquid
luminescent centres
thermal coupling
vision localization
PC1D
UAV
ZnO/Si
dual-switching transistor
memristor
field-effect transistor
higher order synchronization
shallow trench isolation (STI)
memristive device
on-current (Ion)
low voltage
reflection transmision method
dielectric layer
source/drain (S/D)
high efficiency
nanostructure synthesis
InAlN/GaN heterostructure
supercapacitor
high-electron mobility transistor (HEMTs)
heterojunction
p-GaN
recessed channel array transistor (RCAT)
gate field effect
charge injection
saddle FinFET (S-FinFET)
L-shaped tunnel field-effect-transistor
conductivity
energy storage
hierarchical
PECVD
sample grating
MISHEMT
bistability
threshold voltage (VTH)
bandgap tuning
oscillatory neural networks
UV irradiation
Mott transition
third harmonic tuning
topological magnetoelectric effect
cross-gain modulation
2D material
solar cells
silicon on insulator (SOI)
Green’s function
optoelectronic devices
semiconductor optical amplifier
ZnO films
graphene
AlGaN/GaN
polarization effect
two-photon process
conductive atomic force microscopy (cAFM)
2DEG density
vanadium dioxide
interface traps
potential drop width (PDW)
pattern recognition
drain-induced barrier lowering (DIBL)
atomic layer deposition (ALD)
normally off power devices
gate-induced drain leakage (GIDL)
insulator–metal transition (IMT)
zinc oxide
synaptic device
subthreshold slope (SS)
landing
silicon
corner-effect
conditioned reflex
quantum dot
gallium nitride
bismuth ions
conduction band offset
variational form
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology
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