Nanoelectronic Materials, Devices and Modeling

As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The...

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Bibliographic Details
Main Authors:	Li, Qiliang, Zhu, Hao
Format:	Online
Language:	English
Published:	MDPI - Multidisciplinary Digital Publishing Institute 2021
Subjects:	TA1-2040 T1-995 quantum mechanical n/a neuromorphic computation off-current (Ioff) double-gate tunnel field-effect-transistor topological insulator back current blocking layer (BCBL) CMOS power amplifier IC information integration distributed Bragg spike-timing-dependent plasticity electron affinity enhancement-mode current collapse gallium nitride (GaN) band-to-band tunneling vertical field-effect transistor (VFET) ionic liquid luminescent centres thermal coupling vision localization PC1D UAV ZnO/Si dual-switching transistor memristor field-effect transistor higher order synchronization shallow trench isolation (STI) memristive device on-current (Ion) low voltage reflection transmision method dielectric layer source/drain (S/D) high efficiency nanostructure synthesis InAlN/GaN heterostructure supercapacitor high-electron mobility transistor (HEMTs) heterojunction p-GaN recessed channel array transistor (RCAT) gate field effect charge injection saddle FinFET (S-FinFET) L-shaped tunnel field-effect-transistor conductivity energy storage hierarchical PECVD sample grating MISHEMT bistability threshold voltage (VTH) bandgap tuning oscillatory neural networks UV irradiation Mott transition third harmonic tuning topological magnetoelectric effect cross-gain modulation 2D material solar cells silicon on insulator (SOI) Green’s function optoelectronic devices semiconductor optical amplifier ZnO films graphene AlGaN/GaN polarization effect two-photon process conductive atomic force microscopy (cAFM) 2DEG density vanadium dioxide interface traps potential drop width (PDW) pattern recognition drain-induced barrier lowering (DIBL) atomic layer deposition (ALD) normally off power devices gate-induced drain leakage (GIDL) insulator–metal transition (IMT) zinc oxide synaptic device subthreshold slope (SS) landing silicon corner-effect conditioned reflex quantum dot gallium nitride bismuth ions conduction band offset variational form thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technology
Online Access:	35903
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Nanoelectronic Materials, Devices and Modeling

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