Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices
Recently, aluminium scandium nitride (AlScN) emerged as a material with superior properties compared to aluminium nitride (AlN). Substituting Al with Sc in AlN leads to a dramatic increase in the piezoelectric coefficient as well as in electromechanical coupling. This discovery finally allowed us to...
-д хадгалсан:
| Формат: | Online |
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| Хэл сонгох: | англи |
| Хэвлэсэн: |
MDPI - Multidisciplinary Digital Publishing Institute
2023
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| Нөхцлүүд: | |
| Онлайн хандалт: | ONIX_20230714_9783036563671_65 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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| _version_ | 1863739909559287808 |
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| collection | Directory of Open Access Books |
| description | Recently, aluminium scandium nitride (AlScN) emerged as a material with superior properties compared to aluminium nitride (AlN). Substituting Al with Sc in AlN leads to a dramatic increase in the piezoelectric coefficient as well as in electromechanical coupling. This discovery finally allowed us to overcome the limitations of AlN thin films in various piezoelectric applications while still enabling us to benefit from all of the advantages of the parent material system, such as a high temperature stability, CMOS compatibility, and good mechanical properties. Potential applications include RF filters (bulk acoustic wave (BAW) or surface acoustic wave (SAW) resonators), energy harvesting, sensing applications, and infra-red detectors. The recent progress in MOCVD- and MBE-grown AlScN has led to high-frequency and -power electronics, (high-electron-mobility transistors (HEMTs)). AlScN is the first wurtzite III-nitride where ferroelectric switching was observed, allowing for many new possible applications in semiconductor memories additionally, it enables the additional functionality of switching to applications where piezoelectric materials are already in use. This Special Issue was very successful in covering all of the main aspects of AlScN research, including its growth, the fundamental and application-relevant properties, and device fabrication and characterization. We can see that AlScN technology is mature enough to be utilized in wafer-level material development and complicated devices, but there is still much to discover in terms of deposition process control, anisotropy, and, in particular, ferroelectric behavior. |
| format | Online |
| id | doab-20.500.12854ir-101366 |
| institution | Directory of Open Access Books |
| language | eng |
| publishDate | 2023 |
| publishDateRange | 2023 |
| publishDateSort | 2023 |
| publisher | MDPI - Multidisciplinary Digital Publishing Institute |
| publisherStr | MDPI - Multidisciplinary Digital Publishing Institute |
| record_format | ojs |
| spelling | doab-20.500.12854ir-1013662024-03-28T03:32:41Z Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices Žukauskaitė, Agnė AlN AlScN aluminum nitride aluminum scandium nitride micromirror microscanner piezoelectric aluminium scandium nitride piezoelectric thin films MEMS non-metallic substrates scandium-doped aluminum nitride ferroelectric substrate-RF residual stress coercive field leakage current high temperature nonvolatile memory retention fatigue wurtzite film sputter deposition scandium–aluminum nitride Lamb-wave resonators complementary switchable SAW devices piezoelectricity ScAlN thin film diamond thin film 5G technology electromechanical coupling coefficient k2 Q-factor aluminum scandium nitride (AlScN) aluminum nitride (AlN) wet etch potassium hydroxide (KOH) physical vapor deposition stress stress gradient fabrication cantilever beams thermal stability structure analysis X-ray diffraction ferroelectrics thin film PUND test laser ultrasound surface acoustic waves magnetron sputter epitaxy elastic properties thin films piezoelectric films Raman spectroscopy alloy scattering temperature coefficient n/a thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general thema EDItEUR::P Mathematics and Science::PH Physics Recently, aluminium scandium nitride (AlScN) emerged as a material with superior properties compared to aluminium nitride (AlN). Substituting Al with Sc in AlN leads to a dramatic increase in the piezoelectric coefficient as well as in electromechanical coupling. This discovery finally allowed us to overcome the limitations of AlN thin films in various piezoelectric applications while still enabling us to benefit from all of the advantages of the parent material system, such as a high temperature stability, CMOS compatibility, and good mechanical properties. Potential applications include RF filters (bulk acoustic wave (BAW) or surface acoustic wave (SAW) resonators), energy harvesting, sensing applications, and infra-red detectors. The recent progress in MOCVD- and MBE-grown AlScN has led to high-frequency and -power electronics, (high-electron-mobility transistors (HEMTs)). AlScN is the first wurtzite III-nitride where ferroelectric switching was observed, allowing for many new possible applications in semiconductor memories additionally, it enables the additional functionality of switching to applications where piezoelectric materials are already in use. This Special Issue was very successful in covering all of the main aspects of AlScN research, including its growth, the fundamental and application-relevant properties, and device fabrication and characterization. We can see that AlScN technology is mature enough to be utilized in wafer-level material development and complicated devices, but there is still much to discover in terms of deposition process control, anisotropy, and, in particular, ferroelectric behavior. 2023-07-14T14:27:31Z 2023-07-14T14:27:31Z 2023 book ONIX_20230714_9783036563671_65 9783036563671 9783036563664 https://directory.doabooks.org/handle/20.500.12854/101366 eng image/jpeg Attribution 4.0 International https://mdpi.com/books/pdfview/book/7461 https://mdpi.com/books/pdfview/book/7461 MDPI - Multidisciplinary Digital Publishing Institute 10.3390/books978-3-0365-6366-4 10.3390/books978-3-0365-6366-4 46cabcaa-dd94-4bfe-87b4-55023c1b36d0 9783036563671 9783036563664 186 Basel open access |
| spellingShingle | AlN AlScN aluminum nitride aluminum scandium nitride micromirror microscanner piezoelectric aluminium scandium nitride piezoelectric thin films MEMS non-metallic substrates scandium-doped aluminum nitride ferroelectric substrate-RF residual stress coercive field leakage current high temperature nonvolatile memory retention fatigue wurtzite film sputter deposition scandium–aluminum nitride Lamb-wave resonators complementary switchable SAW devices piezoelectricity ScAlN thin film diamond thin film 5G technology electromechanical coupling coefficient k2 Q-factor aluminum scandium nitride (AlScN) aluminum nitride (AlN) wet etch potassium hydroxide (KOH) physical vapor deposition stress stress gradient fabrication cantilever beams thermal stability structure analysis X-ray diffraction ferroelectrics thin film PUND test laser ultrasound surface acoustic waves magnetron sputter epitaxy elastic properties thin films piezoelectric films Raman spectroscopy alloy scattering temperature coefficient n/a thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general thema EDItEUR::P Mathematics and Science::PH Physics Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices |
| title | Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices |
| title_full | Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices |
| title_fullStr | Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices |
| title_full_unstemmed | Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices |
| title_short | Piezoelectric Aluminium Scandium Nitride (AlScN) Thin Films: Material Development and Applications in Microdevices |
| title_sort | piezoelectric aluminium scandium nitride alscn thin films material development and applications in microdevices |
| topic | AlN AlScN aluminum nitride aluminum scandium nitride micromirror microscanner piezoelectric aluminium scandium nitride piezoelectric thin films MEMS non-metallic substrates scandium-doped aluminum nitride ferroelectric substrate-RF residual stress coercive field leakage current high temperature nonvolatile memory retention fatigue wurtzite film sputter deposition scandium–aluminum nitride Lamb-wave resonators complementary switchable SAW devices piezoelectricity ScAlN thin film diamond thin film 5G technology electromechanical coupling coefficient k2 Q-factor aluminum scandium nitride (AlScN) aluminum nitride (AlN) wet etch potassium hydroxide (KOH) physical vapor deposition stress stress gradient fabrication cantilever beams thermal stability structure analysis X-ray diffraction ferroelectrics thin film PUND test laser ultrasound surface acoustic waves magnetron sputter epitaxy elastic properties thin films piezoelectric films Raman spectroscopy alloy scattering temperature coefficient n/a thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general thema EDItEUR::P Mathematics and Science::PH Physics |
| topic_facet | AlN AlScN aluminum nitride aluminum scandium nitride micromirror microscanner piezoelectric aluminium scandium nitride piezoelectric thin films MEMS non-metallic substrates scandium-doped aluminum nitride ferroelectric substrate-RF residual stress coercive field leakage current high temperature nonvolatile memory retention fatigue wurtzite film sputter deposition scandium–aluminum nitride Lamb-wave resonators complementary switchable SAW devices piezoelectricity ScAlN thin film diamond thin film 5G technology electromechanical coupling coefficient k2 Q-factor aluminum scandium nitride (AlScN) aluminum nitride (AlN) wet etch potassium hydroxide (KOH) physical vapor deposition stress stress gradient fabrication cantilever beams thermal stability structure analysis X-ray diffraction ferroelectrics thin film PUND test laser ultrasound surface acoustic waves magnetron sputter epitaxy elastic properties thin films piezoelectric films Raman spectroscopy alloy scattering temperature coefficient n/a thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general thema EDItEUR::P Mathematics and Science::PH Physics |
| url | ONIX_20230714_9783036563671_65 |