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Fundamentals and Recent Advances in Epitaxial Graphene on SiC

This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matte...

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Médium: Online
Jazyk:angličtina
Vydáno: MDPI - Multidisciplinary Digital Publishing Institute 2022
Témata:
epitaxial graphene
copper
redox reaction
electrodeposition
voltammetry
chronoamperometry
DFT
silicon carbide
Raman spectroscopy
2D peak line shape
G peak
charge density
strain
atomic layer deposition
high-k insulators
ion implantation
Raman
AFM
XPS
graphene
SiC
3C-SiC on Si
substrate interaction
carrier concentration
mobility
intercalation
buffer layer
surface functionalization
twistronics
twisted bilayer graphene
flat band
epitaxial graphene on SiC
quasi-free-standing graphene
monolayer graphene
high-temperature sublimation
terahertz optical Hall effect
free charge carrier properties
sublimation
electronic properties
material engineering
deposition
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
On-line přístup:ONIX_20220111_9783036511795_84
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Shrnutí:This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.

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