Chapter Spatial Atomic Layer Deposition

In conventional atomic layer deposition (ALD), precursors are exposed sequentially to a substrate through short pulses while kept physically separated by intermediate purge steps. Spatial ALD (SALD) is a variation of ALD in which precursors are continuously supplied in different locations and kept a...

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Dettagli Bibliografici

Autori principali:	Jiménez, Carmen, Bellet, Daniel, Masse de la Huerta, César, Muñoz-Rojas, David, Huong Nguyen, Viet
Natura:	Online
Lingua:	inglese
Pubblicazione:	InTechOpen 2021
Soggetti:	chemical vapor deposition, spatial atomic layer deposition (SALD), atmospheric pressure, in-line processing, thin films, transparent conductive materials, fluid dynamics thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TG Mechanical engineering and materials::TGM Materials science
Accesso online:	ONIX_20210602_10.5772/intechopen.82439_415
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