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Strain-Engineered MOSFETs

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate...

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Guardat en:
Autors principals: Maiti, C.K., Maiti, T.K.
Format: Online
Idioma:anglès
Publicat: Taylor & Francis 2025
Matèries:
Strained Si
Substrate-Induced Strain Engineering in CMOS Technology
Gate Length
Process-Induced Stress Engineering in CMOS Technology
Power Consumption
Electronic Properties of Strain-Engineered Semiconductors
SCE
Strain-Engineered MOSFETs
Contact Etch Stop Layers
Noise in Strain-Engineered Devices
Mobility Enhancement
Biaxial Tensile Strain
Threshold Voltage
PTM
BTIs
NBTI
Metal Oxide Semiconductor Field Effect Transistor
Shallow Trench Isolation
HCI
Random Dopant Fluctuations
SiGe Layer
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFC Electronics: circuits and components
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFN Microwave technology
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering
Accés en línia:ONIX_20250512_9781466503472_87
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