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Latest Advancements in Semiconductor Materials, Devices, and Systems

The reprint Latest Advancements in Semiconductor Materials, Devices, and Systems compiles groundbreaking research from a Special Issue of Micromachines. This collection explores the forefront of semiconductor innovation, covering diverse topics such as material synthesis, advanced device architectur...

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Salvato in:
Natura: Online
Lingua:inglese
Pubblicazione: MDPI - Multidisciplinary Digital Publishing Institute 2025
Soggetti:
GaN
HEMT
figure of merit
coherent channel
wide bandgap devices
ultrawide bandgap devices
silicon
silicon carbide
diamond
power semiconductor devices
GaN HEMT
trap
characterization methods
DLTS
AlGaN/GaN
high electron mobility transistors (HEMTs)
SiNx passivation
low-pressure chemical vapor deposition (LPCVD)
ohmic contact
SiNx/GaN interface
gate-all-around (GAA) Nanosheet FETs (NSFETs)
compact model
artificial neural network (ANN)
TCAD simulation
stacked DRAM
WoW
cross-process analysis methodology
signal integrity
integrated circuit (IC)
models of integrated circuits for RF immunity behavioral simulation-conducted immunity modeling (ICIM-CI)
immunity modeling
electromagnetic compatibility (EMC) modeling
direct power injection (DPI)
X-parameters
bandgap reference
wide input range
high-order curvature compensation
temperature coefficient
power amplifiers
high efficiency
2.45 GHz
TiO2 nanorod (NR)
Al2O3
ultraviolet (UV) photodetector
atomic layer deposition (ALD)
n/a
thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues
thema EDItEUR::M Medicine and Nursing::MJ Clinical and internal medicine::MJC Diseases and disorders::MJCL Oncology
Accesso online:ONIX_20250220_9783725828081_442
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