Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials

This reprint, entitled "Feature Papers in Electronic Materials Section – Volume 2", is a collection of selected papers recently published in the MDPI journal Materials, focusing on the latest advances in electronic materials and devices in different fields (e.g., power and high-frequency electronics...

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Detalhes bibliográficos
Formato:	Online
Idioma:	inglês
Publicado em:	MDPI - Multidisciplinary Digital Publishing Institute 2025
Assuntos:	quantum well electron effective mass transient spectroscopy graphene epitaxial SiC terrace-stepped relief X-ray scattering atomic force microscopy HTL layer chemical vapor deposition hybrid perovskite charge trap states reliability degradation SiC MOSFET TrenchMOSFET repetitive UIS radiation compensation wide-gap semiconductors deep levels protons electrons current-voltage characteristics capacitance-voltage characteristics ammonothermal gallium nitride crystal growth numerical simulation computational fluid dynamics natural convection buoyancy conjugated heat transfer solvothermal hydrothermal nematic liquid crystals optical phase grating coherent optical processes light scattering light diffraction laser beam intensity control sapphire ribbons gas voids dislocations synchrotron radiation imaging laser annealing silicon silicon carbide crystallization integrated devices membrane sensor deterministic ion implantation counting efficiency spatial resolution mildly oxidized graphene electrochemically exfoliated graphene fast joule heating activated carbon specific surface area a-SiC amorphous PECVD biomedical passivation 3C-SiC epitaxy compliant substrate stacking faults conformal epitaxy synthesis nitrides semiconductors solubility in situ monitoring crystal high-pressure technology supercritical fluid GaN sol-gel TiO2 nanopowder thermal treatment H2S sensor electrical properties free charge carriers optical Hall effect terahertz group-III nitrides aluminum nitride aluminum gallium nitride high-electron-mobility transistor HEMT 4H-SiC thermal treatments micro-Raman spectroscopy graphitization exciton recombination time-resolved photoluminescence spectroscopy thema EDItEUR::G Reference, Information and Interdisciplinary subjects::GP Research and information: general thema EDItEUR::P Mathematics and Science::PG Astronomy, space and time
Acesso em linha:	ONIX_20250220_9783725827985_437
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Feature Papers in Electronic Materials Section (Volume 2)—15th Anniversary of Materials

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