Silicon Carbide

The continuous demand for electronic devices operating at increasing current and power levels has driven research into wide-bandgap (WBG) semiconductors in recent decades. In particular, the 4H hexagonal polytype of silicon carbide (4H-SiC) is the most promising for use in power electronic applicati...

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Detalles Bibliográficos
Formato:	Online
Idioma:	inglés
Publicado:	MDPI - Multidisciplinary Digital Publishing Institute 2025
Subjects:	SiC power MOSFET JFET width JFET doping concentration gate oxide thickness orthogonal P+ layout gate-drain capacitance high-frequency figure-of-merit (HF-FOM) cell topology dodecagonal cell octagonal cell gate-to-drain capacitance (Cgd) specific ON-resistance (Ron,sp) high-frequency figure of merit (HF-FOM) switching performance 4H-SiC MOSFET nitridation scattering Hall measurements body bias transverse electric field silicon carbide integrated photonics material growth local oxidation atomic force microscopy C-AFM doping successive AFM characterizations doped silicon carbide MOSFET high-κ dielectrics ALD WBG 3C-SiC Schottky contact p-diode model non-uniformity 4H-SiC single crystal physical vapor transport (PVT) discoloration switching ToF-SIMS Raman spectroscopy thermal gate oxide SiC charge-driven breakdown QBD CCS CVS PVS electron trapping model pMOSFET 4H-SiC HTGB HTRB pulsed stress threshold voltage instability bilayer graphene field effect transistors nanofabrication Raman spectra analysis DC and RF characterizations n/a thema EDItEUR::M Medicine and Nursing::MJ Clinical and internal medicine::MJC Diseases and disorders::MJCL Oncology thema EDItEUR::C Language and Linguistics::CJ Language teaching and learning thema EDItEUR::2 Language qualifiers::2A Indo-European languages::2AC Germanic and Scandinavian languages::2ACB English thema EDItEUR::4 Educational purpose qualifiers::4L For language learning courses and examinations::4LE For ELT / ESL learning, courses, examinations and certificates
Acceso en liña:	ONIX_20250220_9783725822386_177
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Silicon Carbide

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