Resultats de la cerca - HfO2/Si0.7Ge0.3 five stack
Matèries dins de la cerca
Matèries dins de la cerca
- CVD 1
- Fin etching 1
- FinFET 1
- GOI 1
- GeSn 1
- HNO3 concentration 1
- HfO2/Si0.7Ge0.3 gate stack 1
- III-V on Si 1
- Si-MOS 1
- Si-cap 1
- anode 1
- anti-phase boundaries (APBs) 1
- arsenate 1
- arsenite 1
- atomic layer etching (ALE) 1
- band-to-band tunneling 1
- charge-trap synaptic transistor 1
- dark current 1
- detectors 1
- digital etch 1
- doping effect 1
- dual-selective wet etching 1
- epitaxial grown 1
- epitaxial growth 1
- germanium 1
- heteroepitaxy 1
- in-plane nanowire 1
- interface state density 1
- lasers 1
- lithium-ion batteries 1
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Publicat 2023Matèries: “…HfO2/Si0.7Ge0.3 gate stack…”
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